unisonic technologies co., ltd utt80n10 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-712.a 80a, 100v n-channel power mosfet ? description the utc utt80n10 is an n-channel power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc utt80n10 is suitable for dc-dc converters, off-line ups, high voltage synchronous rect ifier, primary switch for 48v and 24v systems, etc. ? features * r ds(on) =18m ? @ v gs =10v,i d =80a * high switching speed * high current capacity * low gate charge(typical 49nc) ? symbol 1.gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt80n10l-ta3-t UTT80N10G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt80n10 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-712.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v drain current continuous i d 80 a pulsed (note 2) i dm 320 a single pulsed avalanche energy (note 3) e as 416 mj power dissipation p d 211 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse test: pulse width 300s, duty cycle 2% 3. l = 0.13mh, i as = 80a, v dd = 50v, r g = 25 ? , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.59 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =80v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.5 4.5 5.5 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =80a 15 18 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 4152 pf output capacitance c oss 485 pf reverse transfer capacitance c rss 220 pf switching parameters total gate charge q g v gs =10v, v dd =50v, i d =80a 350 nc gate to source charge q gs 23 nc gate to drain charge q gd 16 nc turn-on delay time t d ( on ) v dd =50v, i d =80a, v gs =10v, r gs =5.0 ? 90 ns rise time t r 100 ns turn-off delay time t d ( off ) 450 ns fall-time t f 200 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =80a 0.99 1.25 v maximum body-diode continuous current i s 80 a maximum body-diode pulsed current i sm 320 a body diode reverse recovery time t r r i s =40a, di/dt=100a/s 70 105 ns body diode reverse recovery charge q rr 202 303 nc
utt80n10 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-712.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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